n-type Rashba Spin Splitting in a Bilayer Inorganic Halide Perovskite with External Electric Field

TL;DR

This study reveals an electric-field tunable n-type Rashba spin splitting in bilayer CsPbBr3, with potential applications in spintronic devices, driven by surface relaxation effects affecting electron bands.

Contribution

First-principles analysis of Rashba effect in bilayer CsPbBr3 showing selective electron spin splitting under electric field, a novel insight for 2D spintronics.

Findings

Only electrons exhibit Rashba splitting under EEF.

Rashba parameter reaches 0.88 eV·Å at 1.35 V/nm.

p-type spins do not survive in this bilayer system.

Abstract

In this letter, we investigated the Rashba effect of the CsPbBr$_3$ bilayers under the external electric field (EEF), with the first-principles calculations. For the PbBr$_2$ terminated bilayer, we found that only electrons experience the Rashba splitting under EEF, while holes do not. Such n-type Rashba effect can be ascribed to the surface relaxation effect that reverse the position of the top valence bands. The n-type Rashba parameter can be tuned monotonically to the maximum of 0.88 eV $\AA$ at EEF of 1.35 V/nm at which the sequence of top valence bands recover to the bulk style. During this process the p-type spins will not survive in this 2D CsPbBr$_3$, that indeed hints a new way for making advanced functional spintronic devices.