Anisotropic magnetic properties of the ferromagnetic semiconductor CrSbSe$_3$

TL;DR

This study investigates the anisotropic magnetic properties of CrSbSe$_3$, a ferromagnetic semiconductor, revealing its magnetic behavior, critical exponents, and electronic band gap through comprehensive experimental characterization.

Contribution

It provides detailed experimental insights into the anisotropic magnetic properties and critical behavior of CrSbSe$_3$, a pseudo-one-dimensional ferromagnetic semiconductor, which was previously not well understood.

Findings

CrSbSe$_3$ has a band gap of 0.7 eV.

The material exhibits a ferromagnetic transition at 71 K.

The easy magnetic axis is perpendicular to the chains, along the a-axis.

Abstract

Single crystals of CrSbSe$_3$, a structurally pseudo-one-dimensional ferromagnetic semiconductor, were grown using a high-temperature solution growth technique and were characterized by x-ray diffraction, anisotropic, temperature- and field-dependent magnetization, temperature-dependent resistivity and optical absorption measurements. A band gap of 0.7 eV was determined from both resistivity and optical measurements. At high temperatures, CrSbSe$_3$ is paramagnetic and isotropic with a Curie-Weiss temperature of $\sim$145 K and an effective moment of $\sim$4.1 $\mu_B$/Cr. A ferromagnetic transition occurs at $T_c$ = 71 K. The $a$-axis, perpendicular to the chains in the structure, is the magnetic easy axis, while the chain axis direction, along $b$, is the hard axis. Magnetic isotherms measured around $T_c$ do not follow the behavior predicted by simple mean field critical exponents for a second order phase transition. A tentative set of critical exponents is estimated based on a modified Arrott plot analysis, giving $\beta\sim$0.25, $\gamma\sim$1.38 and $\delta\sim$6.6.