Pure phase BiFeO$_3$ thin films sputtered over Si: A new route towards high magnetization

TL;DR

This study introduces a novel sputtering method to produce pure phase BiFeO$_3$ thin films on silicon with high magnetization, highlighting the role of oxygen vacancies and surface effects in magnetic enhancement.

Contribution

The paper presents a new sputtering route for high-rate deposition of pure phase BiFeO$_3$ films on silicon, achieving high magnetization at room temperature.

Findings

High saturation magnetization (~165,000 A/m) achieved in BiFeO$_3$ films.

Oxygen vacancies and surface effects contribute to magnetic properties.

Films exhibit low surface roughness and are suitable for device integration.

Abstract

We have investigated the structural and magnetic properties of BiFeO$_3$ (BFO) thin films grown over (100)-oriented Si substrates by rf magnetron sputtering in a new route under O$_2$ free low pressure Ar atmosphere. Single-phase BFO films were deposited in a heated substrate and post-annealed in situ. The new routed allows high deposition rate and produce polycrystalline BFO pure phase, confirmed by high resolution X-ray diffraction. Scanning electron and atomic force microscopy reveal very low surface roughness and mean particle size of 33 nm. The BFO phase and composition were confirmed by transmission electron microscopy and line scanning energy-dispersive X-ray spectroscopy in transmission electron microscopy mode. The surface chemistry of the thin film, analyzed by X-ray photoelectron spectroscopy, reveals the presence of Fe$^{3+}$ and Fe$^{2+}$ in a 2:1 ratio, a strong indication that the film contains oxygen vacancies. An hysteretic ferromagnetic behavior with room temperature high saturation magnetization $\sim 165 \times 10^3$ A/m was measured along the film perpendicular and parallel directions. Such high magnetization, deriving from this new route, is explained in the scope of oxygen vacancies, the break of the antiferromagnetic cycloidal order and the increase of spin canting by change in the surface/volume ratio. Understanding the magnetic behavior of a multiferroic thin films is a key for the development of heterogeneous layered structures and multilayered devices and the production of multiferroic materials over Si substrates opens new possibilities in the development of materials that can be directly integrated into the existent semiconductor and spintronic technologies.