High-frequency rectification in graphene lateral p-n junctions

TL;DR

This paper demonstrates terahertz-induced dc current in graphene p-n junctions, showing polarization-dependent rectification effects due to selective doping, advancing understanding of graphene-based terahertz devices.

Contribution

It reports the first observation of terahertz rectification in graphene p-n junctions fabricated by ultraviolet doping, revealing polarization-sensitive photocurrent behavior.

Findings

Terahertz radiation induces a measurable dc current in graphene p-n junctions.

Photocurrent shows strong polarization dependence.

Rectification explained by electric behavior of the junctions.

Abstract

We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions.