Ion-beam sculpting of nanowires

TL;DR

This paper demonstrates ion-beam sculpting of semiconductor nanowires with sub-10 nm features and discovers irradiation-induced growth at room temperature, introducing a new VLS growth mechanism for nanowires.

Contribution

It introduces a novel method for nanowire sculpting and reveals a new irradiation-induced growth mechanism using helium-ion microscopy.

Findings

Successful ion-beam sculpting of nanowires with sub-10 nm features

Discovery of irradiation-induced nanowire growth at room temperature

Proposal of a new VLS growth mechanism during irradiation

Abstract

Nanomaterials often undergo unusual mechanical deformations compared to their bulk counterparts when irradiated with ion-beams. This study visualizes and investigates some of the unusual interactions that can occur in nanomaterials during irradiation with medium-energy ion-beams using a Helium-Ion-Microscope (HIM). Ion-beam sculpting of semiconductor nanowires (NWs) with sub-10 nm features is demonstrated. Moreover, irradiation-induced growth of NWs at room-temperature is discovered. The new concept and possible mechanism of irradiation-induced VLS (vapor-liquid-solid) growth of NWs is introduced. These results are the basis for further fundamental and technological developments towards manipulation and visualization of ion-matter interactions at nanoscales.