Experimental studies of thorium ions implantation from pulse laser plasma into thin silicon oxide layers
P.V. Borisyuk, E.V. Chubunova, Yu.Yu. Lebedinskii, E.V. Tkalya, O.S., Vasilyev, V.P. Yakovlev, E. Strugovshchikov, D. Mamedov, A. Pishtshev, S.Zh., Karazhanov

TL;DR
This study investigates the laser-assisted implantation of thorium ions into silicon dioxide layers, analyzing chemical states, optical properties, and potential applications for nuclear transition research.
Contribution
It provides experimental data on thorium ion implantation into SiO2 using pulsed laser plasma, including chemical, optical, and theoretical insights into the modified material.
Findings
Thorium silicates formed in silicon oxide layers.
Band gaps ranged from 6.0 to 9.0 eV depending on conditions.
Laser implantation could facilitate research on 229Th nuclear transitions.
Abstract
We report the results of experimental studies related to implantation of thorium ions into thin silicon dioxide by pulsed plasma fluxes expansion. Thorium ions were generated by laser ablation from a metal target, and the ionic component of the laser plasma was accelerated in an electric field created by the potential difference (5, 10 and 15 kV) between the ablated target and SiO2/Si(001) sample. Laser ablation system installed inside the vacuum chamber of the electron spectrometer was equipped with YAG:Nd3+ laser having the pulse energy of 100 mJ and time duration of 15 ns in the Q-switched regime. Depth profile of thorium atoms implanted into the 10 nm thick subsurface areas together with their chemical state as well as the band gap of the modified silicon oxide at different conditions of implantation processes were studied by means of X-ray photoelectron spectroscopy (XPS) and…
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