Atomically resolved scanning force studies of vicinal Si(111)
Carmen Perez Leon, Holger Drees, Stefan Martin Wippermann, Michael, Marz, and Regina Hoffmann-Vogel

TL;DR
This study combines high-resolution scanning force microscopy and ab initio calculations to elucidate the atomic structure of vicinal Si(111) surfaces, revealing detailed features and the role of charge transfer in surface stabilization.
Contribution
It provides the first atomic-resolution SFM images of vicinal Si(111) surfaces, confirming structural models and explaining surface defects through combined experimental and theoretical analysis.
Findings
Confirmed (7 7 10) surface orientation.
Revealed structural details of steps and defects.
Highlighted charge transfer's role in surface stability.
Abstract
Well-ordered stepped semiconductor surfaces attract intense attention owing to the regular arrangements of their atomic steps that makes them perfect templates for the growth of one- dimensional systems, e.g. nanowires. Here, we report on the atomic structure of the vicinal Si(111) surface with 10 degree miscut investigated by a joint frequency-modulation scanning force microscopy (FM-SFM) and ab initio approach. This popular stepped surface contains 7 x 7-reconstructed terraces oriented along the Si(111) direction, separated by a stepped region. Recently, the atomic structure of this triple step based on scanning tunneling microscopy (STM) images has been subject of debate. Unlike STM, SFM atomic resolution capability arises from chemical bonding of the tip apex with the surface atoms. Thus, for surfaces with a corrugated density of states such as semiconductors, SFM provides…
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