Experimental demonstration of a Josephson magnetic memory cell with a programmable \pi-junction
I. M. Dayton, T. Sage, E. C. Gingrich, M. G. Loving, T. F. Ambrose, N., P. Siwak, S. Keebaugh, C. Kirby, D. L. Miller, A. Y. Herr, Q. P. Herr, and O., Naaman

TL;DR
This paper demonstrates a Josephson magnetic memory cell using a NiFe/Cu/Ni pseudo spin-valve junction that can be switched between zero and pi states, paving the way for scalable superconducting cryogenic memory.
Contribution
It experimentally shows how to control the phase state of a Josephson junction with magnetic states, introducing a new approach for superconducting memory devices.
Findings
Memory states mapped onto zero or pi phase states.
Switching between states achieved with ~5 mT magnetic fields.
First demonstration of a programmable pi-junction in a magnetic Josephson device.
Abstract
We experimentally demonstrate the operation of a Josephson magnetic random access memory unit cell, built with a Ni_80Fe_20/Cu/Ni pseudo spin-valve Josephson junction with Nb electrodes and an integrated readout SQUID in a fully planarized Nb fabrication process. We show that the parallel and anti-parallel memory states of the spin-valve can be mapped onto a junction equilibrium phase of either zero or pi by appropriate choice of the ferromagnet thicknesses, and that the magnetic Josephson junction can be written to either a zero-junction or pi-junction state by application of write fields of approximately 5 mT. This work represents a first step towards a scalable, dense, and power-efficient cryogenic memory for superconducting high-performance digital computing.
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