Thick Bi2Sr2CaCu2O8+{\delta} films grown by liquid-phase epitaxy for Josephson THz applications

TL;DR

This paper demonstrates the growth of thick Bi2Sr2CaCu2O8+{ extdelta} films via liquid-phase epitaxy, enabling the realization of THz-on-a-chip devices using intrinsic Josephson junctions for THz generation and sensing.

Contribution

It introduces a method for growing thick Bi-2212 films with high structural quality suitable for THz applications, advancing the fabrication of compact THz devices.

Findings

Thick Bi-2212 films exhibit excellent c-axis alignment and large single crystal grains.

Clear branched current-voltage characteristics indicate underdamped intrinsic Josephson junctions.

LPE growth conditions can be optimized for improved superconducting properties.

Abstract

Theoretical and experimental studies of intrinsic Josephson junctions that naturally occur in high-Tc superconducting Bi2Sr2CaCu2O8+{\delta} (Bi-2212) have demonstrated their potential for novel types of compact devices for the generation and sensing of electromagnetic radiation in the THz range. Here, we show that the THz-on-a-chip concept may be realized in liquid phase epitaxial-grown (LPE) thick Bi-2212 films. We have grown {\mu}m-thick Bi-2212 LPE films on MgO substrates. These films display excellent c-axis alignment and single crystal grains of about 650x150 {\mu}m2 in size. A branched current-voltage characteristic was clearly observed in c-axis transport, which is a clear signature of underdamped intrinsic Josephson junctions, and a prerequisite for THz-generation. We discuss LPE growth conditions allowing improvement of the structural quality and superconducting properties of Bi-2212 films for THz applications.