Ion Implantation for Deterministic Single Atom Devices

TL;DR

This paper presents a method combining focused ion beam and solid-state ion detectors for precise, deterministic doping of single atoms, enabling the fabrication of single atom devices in various materials.

Contribution

It introduces a novel platform that achieves deterministic single ion implantation with high spatial accuracy and single-ion detection capability.

Findings

Focused ion beam can position a single ion within 35 nm of target

Solid-state detectors can sense individual low-energy heavy ions

Platform enables deterministic fabrication of single atom devices

Abstract

We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.