Exact solutions for silicon photomultipliers models and application to measurements

TL;DR

This paper introduces exact formulas derived from a statistical model to accurately measure dark count rate and correlated noise in silicon photomultipliers, improving parameter estimation from noise spectra.

Contribution

The paper presents a novel method with exact formulas for parameter measurement in SiPMs, surpassing approximate formulas and fitting methods.

Findings

Accurate measurement of dark count rate and correlated noise from first peak areas.

Validation of the method's accuracy through numerical analysis.

Application potential for improved SiPM noise characterization.

Abstract

Dark count rate and correlated noise rate are among the main parameters that characterize silicon photomultipliers (SiPM). Typically, these parameters are evaluated by applying approximate formulas, or by fitting specific models, to the measured SiPM noise spectra. Here a novel approach is presented, where exact formulas are derived from a statistical model of dark counts and correlated noise generation. The method allows one to measure the true value of such parameters from the areas of just the first peaks in the dark spectrum. A numerical analysis shows the accuracy of the method.