Non-necessity of band inversion process in 2D topological insulators for bulk gapless states and topological phase transitions

TL;DR

This paper demonstrates that in 2D topological insulators, bulk gapless states and topological phase transitions can occur without the traditional band inversion process, challenging common assumptions and providing a flexible model for future research.

Contribution

It introduces a simple, flexible model showing gapless states and phase transitions without band inversion, clarifying misconceptions in topological insulator theory.

Findings

Gapless states can occur at phase boundaries without band inversion.

Bulk gapless states do not need to be at symmetry-protected k-points.

A versatile model with arbitrary Chern number is proposed.

Abstract

In commonly employed models for 2D topological insulators, bulk gapless states are well known to form at the band inversion points where the degeneracy of the states is protected by symmetries. It is thus sometimes quite tempting to consider this feature, the occurrence of gapless states, a result of the band inversion process under protection of the symmetries. Similarly, the band inversion process might even be perceived as necessary to induce 2D topological phase transitions. To clarify these misleading perspectives, we propose a simple model with a flexible Chern number to demonstrate that the bulk gapless states emerge at the phase boundary of topological phase transitions, despite the absence of band inversion process. Furthermore, the bulk gapless states do not need to occur at the special $k$-points protected by symmetries. Given the significance of these fundamental \textit{conceptual} issues and their wide-spread influence, our clarification should generate strong general interests and significant impacts. Furthermore, the simplicity and flexibility of our general model with an arbitrary Chern number should prove useful in a wide range of future studies of topological states of matter.