Equivalent Circuit for Magnetoelectric Read and Write Operations

TL;DR

This paper introduces an equivalent circuit model for magnetoelectric devices, proposing a novel way to represent binary states via easy axes rather than net magnetization, enabling new read/write operations and potential non-volatile memory applications.

Contribution

The paper presents a new equivalent circuit model and a radical approach to representing binary states using easy axes, diverging from traditional magnetization-based methods.

Findings

Model accurately benchmarks against experimental data

Proposes a new read/write mode using easy axes

Suggests potential for non-volatile memory without magnetic fields

Abstract

We describe an equivalent circuit model applicable to a wide variety of magnetoelectric phenomena and use SPICE simulations to benchmark this model against experimental data. We use this model to suggest a different mode of operation where the "1" and "0'" states are not represented by states with net magnetization (like $m_x$, $m_y$ or $m_z$) but by different easy axes, quantitatively described by ($m_x^2 - m_y^2$) which switches from "0" to "1" through the write voltage. This change is directly detected as a read signal through the inverse effect. The use of ($m_x^2 - m_y^2$) to represent a bit is a radical departure from the standard convention of using the magnetization ($m$) to represent information. We then show how the equivalent circuit can be used to build a device exhibiting tunable randomness and suggest possibilities for extending it to non-volatile memory with read and write capabilities, without the use of external magnetic fields or magnetic tunnel junctions.