E-beam manipulation of Si atoms on graphene edges with aberration-corrected STEM

TL;DR

This paper demonstrates the controlled manipulation of silicon atoms at graphene edges using aberration-corrected STEM, advancing atomic-scale material control for future quantum and memristive devices.

Contribution

It shows the feasibility of atom-by-atom control of Si dopants at graphene edges using electron beam techniques, including cleaning, replenishing, and repositioning atoms.

Findings

Graphene edges can be cleaned of Si atoms and replenished from nearby sources.

Si atoms can be moved from edges into the graphene lattice and vice versa.

Controlled sputtering can bury or uncover Si dopants at the edges.

Abstract

The burgeoning field of atomic level material control holds great promise for future breakthroughs in quantum and memristive device manufacture and fundamental studies of atomic-scale chemistry. Realization of atom-by atom control of matter represents a complex and ongoing challenge. Here, we explore the feasibility of controllable motion of dopant Si atoms at the edges of graphene via the sub-atomically focused electron beam in a scanning transmission electron microscope (STEM). We demonstrate that the graphene edges can be cleaned of Si atoms and then subsequently replenished from nearby source material. It is also shown how Si edge atoms may be pushed from the edge of a small hole into the bulk of the graphene lattice and from the bulk of the lattice back to the edge. This is accomplished through sputtering of the edge of the graphene lattice to bury or uncover Si dopant atoms. These experiments form an initial step toward general atomic scale material control.