VO 2 -based radiative thermal transistor in the static regime

TL;DR

This paper investigates a near-field radiative thermal transistor using VO 2, exploiting its insulator-metal transition to modulate heat fluxes between silica plates in various regimes, optimizing for maximum modulation.

Contribution

It introduces a VO 2-based radiative thermal transistor model and analyzes its behavior across different regimes, identifying optimal configurations for heat flux modulation.

Findings

Maximum modulation factor identified for specific configurations.

Thermal currents depend on VO 2 temperature and layer thickness.

Different regimes show distinct heat transfer behaviors.

Abstract

We study a near-field radiative thermal transistor analogous to an electronic one made of a VO 2 base placed between two silica semi-infinite plates playing the roles of the transistor collector and emitter. The fact that VO 2 exhibits an insulator to metal transition is exploited to modulate and/or amplify heat fluxes between the emitter and the collector, by applying a thermal current on the VO 2 base. We study the transistor behavior in 4 typical regimes where the emitter-base and base-collector separation distances can be larger or smaller than the thermal wavelength, and in which the VO 2 layer can be opaque or transparent. Thermal currents variations with the base temperatures are calculated and analyzed. An optimum configuration for base thickness and separation distance maximizing the thermal transistor modulation factor is found.