Angle Dependent Interlayer Magnetoresistance (ILMR) in Multilayer Graphene Stacks

TL;DR

This paper reports the first experimental observation of angle-dependent interlayer magnetoresistance in multilayer graphene, revealing sharper changes with tilt angle and aligning qualitatively with existing theories.

Contribution

It provides the first experimental demonstration of angle-dependent ILMR in graphitic systems and offers a physical explanation for the observed effects.

Findings

First experimental report of angle-dependent ILMR in graphene

Sharper ILMR changes observed with tilt angle variation

Qualitative agreement with existing ILMR theories

Abstract

Interlayer magnetoresistance (ILMR) effect is explored in a vertical stack of weakly coupled multilayer graphene as grown by chemical vapor deposition (CVD). This effect has been characterized as a function of temperature and tilt angle of the magnetic field with respect to the interlayer current. To our knowledge, this is the first experimental report on angle dependent ILMR effect in graphitic systems. Our data agrees qualitatively with the existing theories of ILMR in multilayer massless Dirac Fermion systems. However, a sharper change in ILMR has been observed as the tilt angle of the magnetic field is varied. A physical explanation of this effect is proposed, which is consistent with our experimental scenario.