Device model for pixelless infrared image up-converters based on polycrystalline graphene heterostructures
V. Ryzhii, M. S. Shur, M. Ryzhii, V. E. Karasik, and T.Otsuj

TL;DR
This paper presents a device model for pixelless infrared image up-converters using polycrystalline graphene heterostructures, enabling efficient conversion of FIR/MIR images into NIR/VIR images without pixelation.
Contribution
The study introduces a novel pixelless PGLIP-LED up-converter model utilizing polycrystalline graphene layers, highlighting their high photoconductive gain and efficiency advantages over quantum-well based devices.
Findings
High image contrast transfer function depends on PGL lateral resistivity.
The up-converter achieves high photoconductive gain and efficiency.
Layers with varying resistivities can be used in practical devices.
Abstract
We develop a device model for pixelless converters of far/mid-infrared radiation (FIR/MIR) images into near-infrared/visible (NIR/VIR) images. These converters use polycrystalline graphene layers (PGLs) immersed in the van der Waals (vdW) materials integrated with light emitting diode (LED). The PGL serves as an element of the PGL infrared photodetector (PGLIP) sensitive to the incoming FIR/MIR due to the interband absorption. The spatially non-uniform photocurrent generated in the PGLIP repeats (mimics) the non-uniform distribution (image) created by the incident FIR/MIR. The injection of the nonuniform photocurrent into the LED active layer results in the nonuniform NIR/VIR image reproducing the FIR/MIR image. The PGL and the entire layer structure are not deliberately partitioned into pixels. We analyze the characteristics of such pixelless PGLIP-LED up-converters and show that their…
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