Effective model for $A_{2g}$ Raman signal in URu$_2$Si$_2$

TL;DR

This paper develops an effective theoretical model to explain the $A_{2g}$ Raman scattering signal observed in URu$_2$Si$_2$, linking experimental features to local order and quantum spin liquid behavior.

Contribution

It introduces a novel effective model specifically for the $A_{2g}$ Raman response in URu$_2$Si$_2$, extending previous theoretical schemes to interpret experimental data.

Findings

Identifies an inelastic peak in the $A_{2g}$ channel due to local order and quantum spin liquid effects.

Provides a theoretical explanation for the $A_{2g}$ Raman response observed in the hidden order phase.

Connects the Raman scattering features to underlying electronic correlations and order parameters.

Abstract

We propose an effective model to describe the $A_{2g}$ signal in Raman scattering experiments in the URu$_{2}$Si$_{2}$ compound. We follow the scheme proposed earlier by Khveshchenko and Wiegmann [Phys. Rev. Lett. 73, 500 (1994)] to calculate the $A_{2g}$ scattering vertex. We extract the imaginary part of a two-point current-current correlation function and compare it directly with the Raman response. We obtain an inelastic peak at $A_{2g}$ channel owing to the interplay between a local staggered ordering and a possible quantum spin liquid behavior. Our results offer an explanation for the electronic Raman scattering experiments at the hidden order phase in URu$_{2}$Si$_{2}$ compound [Phys. Rev. Lett. 113, 266405 (2014)].