IP determination and 1+1 REMPI spectrum of SiO at 210-220 nm with implications for SiO$^{+}$ ion trap loading

TL;DR

This study records the REMPI spectrum of SiO, estimates its ionization potential, and proposes a method for efficiently loading SiO$^{+}$ ions into a trap using specific laser transitions.

Contribution

It provides the first detailed REMPI spectrum of SiO in the 210-220 nm range and introduces a new method for loading SiO$^{+}$ ions into an ion trap.

Findings

Estimated SiO ionization potential at 11.59 eV.

Identified efficient laser transition at 213.977 nm for SiO$^{+}$ loading.

Recorded and assigned vibrational bands in the REMPI spectrum.

Abstract

The 1+1 REMPI spectrum of SiO in the 210-220 nm range is recorded. Observed bands are assigned to the $A-X$ vibrational bands $(v``=0-3, v`=5-10)$ and a tentative assignment is given to the 2-photon transition from $X$ to the n=12-13 $[X^{2}{\Sigma}^{+},v^{+}=1]$ Rydberg states at 216-217 nm. We estimate the IP of SiO to be 11.59(1) eV. The SiO$^{+}$ cation has previously been identified as a molecular candidate amenable to laser control. Our work allows us to identify an efficient method for loading cold SiO$^{+}$ from an ablated sample of SiO into an ion trap via the $(5,0)$ $A-X$ band at 213.977 nm.