Topology driven g-factor tuning in type-II quantum dots

TL;DR

This paper explores how voltage tuning in type II InAs/GaAsSb quantum dots induces topological transitions affecting exciton properties, revealing potential for advanced spin quantum memory applications.

Contribution

It demonstrates voltage-controlled topological transitions in quantum dots and links these to observable Aharonov-Bohm oscillations and g-factor changes, supported by theoretical models.

Findings

Voltage induces a transition from singly to doubly connected topology.

Observable Aharonov-Bohm oscillations in exciton properties.

Modulation of exciton g-factor by applied bias.

Abstract

We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type II InAs/GaAsSb quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g-factor which are modulated by the applied bias. The results are explained in the frame of realistic $\mathbf{k}\cdot\mathbf{p}$ and effective Hamiltonian models and could open a venue for new spin quantum memories beyond the InAs/GaAs realm.