Superconducting epitaxial YBa2Cu3O7-{\delta} on SrTiO3 buffered Si (001)

TL;DR

This paper demonstrates the successful epitaxial growth of high-quality superconducting YBa2Cu3O7-{ extdelta} films on silicon substrates using a SrTiO3 buffer, enabling integration of cuprate superconductors with silicon technology.

Contribution

It introduces a method for epitaxially integrating superconducting YBa2Cu3O7-{ extdelta} films on silicon via a SrTiO3 buffer, combining pulsed-laser deposition and oxide molecular beam epitaxy.

Findings

YBa2Cu3O7-{ extdelta} films exhibit a transition temperature of ~93 K.

High-quality epitaxial films with narrow transition width (<5 K) achieved.

Successful integration of superconducting films on silicon substrate.

Abstract

Thin films of optimally-doped (001)-oriented YBa2Cu3O7-{\delta} are epitaxially integrated on silicon (001) through growth on a single crystalline SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the SrTiO3 buffer enables high quality YBa2Cu3O7-{\delta} films exhibiting high transition temperatures to be integrated on Si. For a 30 nm thick SrTiO3 buffer, 50 nm thick YBa2Cu3O7-{\delta} films that exhibit a transition temperature of ~ 93 K, and a narrow transition width (< 5 K) are achieved. The integration of single crystalline YBa2Cu3O7-{\delta} on Si (001) paves the way for the potential exploration of cuprate materials in a variety of applications.