Magnetic anisotropy in antiferromagnetic hexagonal MnTe
D. Kriegner, H. Reichlova, J. Grenzer, W. Schmidt, E. Ressouche, J., Godinho, T. Wagner, S. Y. Martin, A.B. Shick, V. V. Volobuev, G. Springholz,, V. Hol\'y, J. Wunderlich, T. Jungwirth, and K. V\'yborn\'y
TL;DR
This study investigates the magnetic anisotropy of antiferromagnetic hexagonal MnTe thin films using experimental techniques and DFT calculations, revealing domain orientations, spin-flop transitions, and effects of epitaxial strain.
Contribution
It provides new insights into the magnetic anisotropy and domain behavior of MnTe thin films, including the influence of strain on spin-flop transition fields.
Findings
Easy axes along <1-100> directions in the basal plane.
Spin-flop transition observed at different fields depending on substrate-induced strain.
Epitaxial strain significantly alters the spin-flop transition field.
Abstract
Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies. The easy axes of the magnetic moments within the hexagonal basal plane are determined to be along directions. The spin-flop transition and concomitant repopulation of domains in strong magnetic fields is observed. Using epitaxially induced strain the onset of the spin-flop transition changes from ~T to ~T for films grown on InP and SrF substrates, respectively.
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