Extremely Large Magnetoresistance and Electronic Structure of TmSb

TL;DR

This study investigates TmSb's electronic structure and magneto-transport properties, revealing extremely large magnetoresistance, trivial topology, and electron-hole compensation as key factors.

Contribution

It provides the first detailed analysis of TmSb's electronic structure, magnetoresistance, and Fermi surface contributions, establishing its trivial topological nature.

Findings

TmSb exhibits extremely large transverse magnetoresistance.

Fermi surface splitting observed due to spin-orbit interaction.

Electronic structure shows no band inversion, indicating trivial topology.

Abstract

We report the magneto-transport properties and the electronic structure of TmSb. TmSb exhibits extremely large transverse magnetoresistance and Shubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field. Interestingly, the split of Fermi surfaces induced by the nonsymmetric spin-orbit interaction has been observed from SdH oscillation. The analysis of the angle-dependent SdH oscillation illustrates the contribution of each Fermi surface to the conductivity. The electronic structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrates a gap at $X$ point and the absence of band inversion. Combined with the trivial Berry phase extracted from SdH oscillation and the nearly equal concentrations of electron and hole from Hall measurements, it is suggested that TmSb is a topologically trivial semimetal and the observed XMR originates from the electron-hole compensation and high mobility.