Robust formation of topological Hall effect in MnGa/heavy metal bilayers

TL;DR

This study demonstrates the robust formation of the topological Hall effect in MnGa/heavy metal bilayers, driven by interfacial Dzyaloshinskii-Moriya interaction, with implications for magnetic storage and fundamental physics.

Contribution

It reveals the conditions for strong topological Hall effect in MnGa/heavy metal bilayers and highlights the role of interfacial DMI in magnetic behavior.

Findings

Strong THE signals in MnGa/Pt and MnGa/Ta bilayers.

Large topological Hall component across 5-300 K.

Correlation between DMI energy constant and THE strength.

Abstract

We have investigated the topological Hall effect (THE) in MnGa/Pt and MnGa/Ta bilayers induced by interfacial Dzyaloshinskii-Moriya interaction (DMI). The most evident THE signals have been found based on the MnGa films with small critical DMI energy constant Dc. The large topological portion of the Hall signal from the total Hall signal has been extracted in the whole temperature range from 5 to 300 K. These results open up the exploration of the DMI induced magnetic behavior based on the bulk perpendicular magnetic anisotropy materials for fundamental physics and magnetic storage technologies.