High-order harmonic generation of doped semiconductor

TL;DR

This paper demonstrates that doping semiconductors significantly enhances high-order harmonic generation, with doped materials producing 1 to 3 orders of magnitude more harmonics than undoped ones, using TDSE simulations.

Contribution

It introduces a novel analysis of how doping influences HHG in semiconductors, providing insights into controlling harmonic generation through doping.

Findings

Doped semiconductors produce 1-3 orders higher harmonics than undoped.

Energy band structure analysis explains the enhancement.

Doping effectively controls HHG in semiconductors.

Abstract

We investigate the high-order harmonic generation (HHG) in doped semiconductors. The HHG is simulated with the single-electron time-dependent Schr\"{o}dinger equation (TDSE). The results show that the high-order harmonics in the second plateau generated from the doped semiconductors is about 1 to 3 orders of magnitude higher than those from the undoped semiconductor. The results are explained based on the analysis of the energy band structure and the time-dependent population imaging. Our work indicates that doping can effectively control the HHG in semiconductor.