Realization of a hole-doped Mott insulator on a triangular silicon lattice
Fangfei Ming, Steve Johnston, Daniel Mulugeta, Tyler S. Smith, Paolo, Vilmercati, Geunseop Lee, Thomas A. Maier, Paul C. Snijders, and Hanno H., Weitering

TL;DR
This paper demonstrates that a hole-doped Mott insulator can be realized on a silicon surface with a triangular lattice, exhibiting key Mott physics features similar to complex oxides, opening new avenues for quantum material engineering.
Contribution
The study introduces a silicon-based platform for Mott insulators with a triangular lattice, enabling exploration of exotic quantum phases in a more controllable and less complex material system.
Findings
Observation of spectral weight transfer indicating Mott physics
Formation of quasi-particle states at the Fermi level
Presence of a sharp density of states singularity
Abstract
The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magneto-resistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with similar richness of physical phenomena, but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. Adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half-filled dangling bond orbitals. Modulation hole-doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasi-particle…
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