SPICE Simulation of tunnel FET aiming at 32 kHz crystal-oscillator operation
Tetsufumi Tanamoto, Chika Tanaka, Satoshi Takaya, and Masato Koyama

TL;DR
This paper explores the use of Tunnel FETs in 32 kHz crystal oscillators through SPICE simulations, demonstrating significant power savings compared to traditional CMOS transistors.
Contribution
It introduces a novel application of TFETs in low-frequency oscillators and provides simulation-based evidence of their power efficiency benefits.
Findings
TFETs reduce power consumption to one-tenth of CMOS.
SPICE simulation validates the feasibility of TFETs in oscillator circuits.
Potential for energy-efficient low-frequency oscillator design.
Abstract
We numerically investigate the possibility of using Tunnel field-effect transistor (TFET) in a 32 kHz crystal oscillator circuit to reduce power consumption. A simulation using SPICE (Simulation Program with Integrated Circuit Emphasis) is carried out based on a conventional CMOS transistor model. It is shown that the power consumption of TFET is one-tenth that of conventional low-power CMOS.
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Taxonomy
TopicsAdvancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Nanowire Synthesis and Applications
