Single Photon Emission from Plasma Treated 2D Hexagonal Boron Nitride
Zai-Quan Xu, Christopher Elbadawi, Toan Trong Tran, Mehran Kianinia,, Xiuling Li, Daobin Liu, Timothy B. Hoffman, Minh Nguyen, Sejeong Kim, James, H. Edgar, Xiaojun Wu, Li Song, Sajid Ali, Mike Ford, Milos Toth, Igor, Aharonovich

TL;DR
This study develops a plasma and thermal annealing process to create stable, oxygen-related single photon emitters in hexagonal boron nitride, advancing quantum nanophotonics applications.
Contribution
It introduces a robust two-step fabrication method that significantly increases stable quantum emitters in hBN and identifies oxygen-related defect complexes as key emitters.
Findings
Seven-fold increase in emitter concentration
Emitters are photostable at room temperature
Emission wavelengths >700 nm linked to oxygen defects
Abstract
Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Yet, synthesis of color centers that act as single photon emitters which are suitable for on-chip applications is still beyond reach. Here, we report a number of plasma and thermal annealing methods for the fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprised of Ar plasma etching and subsequent annealing in Ar is highly robust, and yields a seven-fold increase in the concentration of emitters in hBN. The initial plasma etching step generates emitters that suffer from blinking and bleaching, whereas the two-step process yields emitters that are photostable at room temperature and have an emission energy distribution that is red-shifted relative to that of pristine…
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Taxonomy
TopicsGraphene research and applications · 2D Materials and Applications · Diamond and Carbon-based Materials Research
