Optical constants of DC sputtering derived ITO, TiO2 and TiO2:Nb thin films characterized by spectrophotometry and spectroscopic ellipsometry for optoelectronic devices
Mohammed Rasheed, Regis Barille

TL;DR
This study characterizes the optical constants of ITO, TiO2, and Nb-doped TiO2 thin films deposited by DC sputtering, using spectrophotometry and spectroscopic ellipsometry, to evaluate their suitability for optoelectronic devices.
Contribution
It introduces a new amorphous model for spectroscopic ellipsometry measurements and compares optical parameters obtained by different techniques for these thin films.
Findings
High transmittance in visible range (86-91%) on glass substrates.
Optical band gaps around 3.3-3.6 eV for all films.
Excellent agreement between UV and SE measurements of optical constants.
Abstract
Thin films of inorganic materials as Tin-doped indium oxide, titanium oxide, Niobium doped titanium oxide, were deposited for comparison on glass and Polyethylene terephthalate (PET) substrates with a DC sputtering method. These thin films have been characterized by different techniques: Dektak Surface Profilometer, X-ray diffraction (XRD), SEM, (UV/Vis/NIR) spectrophotometer and spectroscopic ellipsometry (SE). The optical parameters of these films such as transmittance, reflectance, refractive index, extinction coefficient, energy gap obtained with different electronic transitions, real and imaginary ({\epsilon}_r,{\epsilon}_i) dielectric constants, were determined in the wavelengths range of (200 - 2200) nm. The results were compared with SE measurements in the ranges of (0.56- 6.19) eV by a new amorphous model with steps of 1 nm. SE measurements of optical constant have been…
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