Gate tunable third-order nonlinear optical response of massless Dirac fermions in graphene
Tao Jiang, Di Huang, Jinluo Cheng, Xiaodong Fan, Zhihong Zhang, Yuwei, Shan, Yangfan Yi, Yunyun Dai, Lei Shi, Kaihui Liu, Changgan Zeng, Jian Zi,, J.E. Sipe, Yuen-Ron Shen, Wei-Tao Liu, Shiwei Wu

TL;DR
This study experimentally and theoretically investigates how tuning the chemical potential in graphene affects its third-order nonlinear optical responses, revealing significant enhancement and divergence in third harmonic generation and four-wave mixing.
Contribution
First experimental and theoretical analysis of doping-dependent third-order nonlinearities in graphene, demonstrating gate-controlled enhancement and divergence of nonlinear optical processes.
Findings
THG enhanced by ~30 times with heavy doping
Difference-frequency FWM shows divergence in undoped graphene
Chemical potential tuning enables control over nonlinear optical responses
Abstract
Materials with massless Dirac fermions can possess exceptionally strong and widely tunable optical nonlinearities. Experiments on graphene monolayer have indeed found very large third-order nonlinear responses, but the reported variation of the nonlinear optical coefficient by orders of magnitude is not yet understood. A large part of the difficulty is the lack of information on how doping or chemical potential affects the different nonlinear optical processes. Here we report the first experimental study, in corroboration with theory, on third harmonic generation (THG) and four-wave mixing (FWM) in graphene that has its chemical potential tuned by ion-gel gating. THG was seen to have enhanced by ~30 times when pristine graphene was heavily doped, while difference-frequency FWM appeared just the opposite. The latter was found to have a strong divergence toward degenerate FWM in undoped…
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