Distinct photoluminescence in multilayered van der Waals heterostructures of MoS2/WS2/ReS2 and BN

TL;DR

This study investigates the photoluminescence properties of multilayered van der Waals heterostructures composed of MoS2, WS2, ReS2, and BN, revealing strong emission peaks relevant for optoelectronic applications.

Contribution

It reports the growth and optical characterization of novel multilayered heterostructures with distinct emission features, expanding understanding of their band-to-band recombination mechanisms.

Findings

Strong emission around 2.3 eV observed in all heterostructures

Multiple subsidiary peaks identified at 2.8, 1.9, 1.7, and 1.5 eV

BN and TMDs form type-I heterojunctions with potential for solar applications

Abstract

Van der Waals heterostructures of (TMDL=1/BNL=1-4/TMDL=1/BNL=1-4), [TMD = MoS2, WS2, and ReS2] are grown on c-plane sapphire substrate by pulsed laser deposition under slow kinetic condition. The heterostructure systems show strong emission around 2.3 eV and subsidiary peaks around 2.8, 1.9, 1.7 and 1.5 eV. BN and TMDs forms type-I heterojunction and the emission peaks observed are explained in terms of various band to band recombination processes and considering relative orientation of Brillouin Zones. The emission peak around 2.3eV is promising for solar and photovoltaic application. The observation is almost similar for three different heterostructure systems.