Quantitative touchdown localization for the MEMS problem with variable dielectric permittivity
Carlos Esteve, Philippe Souplet

TL;DR
This paper provides quantitative conditions for touchdown localization in MEMS models with variable dielectric permittivity, using finite-dimensional optimization and maximum principle techniques, with results applicable to practical MEMS design.
Contribution
It introduces a method to estimate the ratio of permittivity profiles that prevent touchdown outside specific regions, with explicit bounds derived from optimization problems.
Findings
Touchdown can be localized within permittivity bumps.
The ratio threshold for no touchdown outside bumps can be as high as 0.3.
Quantitative estimates are obtained via finite-dimensional optimization.
Abstract
We consider a well-known model for micro-electromechanical systems (MEMS) with variable dielectric permittivity, based on a parabolic equation with singular nonlinearity. We study the touchdown or quenching phenomenon. Recently, the question whether or not touchdown can occur at zero points of the permittivity profile, which had long remained open, was answered negatively by Guo and Souplet for the case of interior points, and we then showed that touchdown can actually be ruled out in subregions of the domain where the permittivity is positive but suitably small. The goal of this paper is to further investigate the touchdown localization problem and to show that, in one space dimension, one can obtain quite quantitative conditions. Namely, for large classes of typical, one-bump and two-bump permittivity profiles, we find good lower estimates of the ratio between f and its maximum,…
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