Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon

TL;DR

This paper reports the observation of giant self-induced transparency in n-doped silicon when exposed to intense, few-cycle terahertz pulses, resulting in a 90-fold increase in transmission at high electric fields.

Contribution

It demonstrates a significant nonlinear optical phenomenon in silicon under high-field terahertz excitation, revealing a new regime of terahertz-matter interaction.

Findings

Transmittance increases by approximately 90 times at high terahertz fields.

Achieved electric field strengths up to 3.1 MV/cm with 700 fs pulses.

Observed giant self-induced transparency in n-doped silicon.

Abstract

The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of $8.7\times10^{16}$ cm$^{-3}$) are presented. We use terahertz pulses with electric field strengths up to 3.1 MV cm$^{-1}$ and a pulse duration of 700 fs. Huge transmittance enhancement of $\sim$90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5--3.1 MV cm$^{-1}$.