Metallic supercurrent field-effect transistor
G. De Simoni, F. Paolucci, P. Solinas, E. Strambini, F. Giazotto

TL;DR
This paper demonstrates the first experimental control of supercurrent in all-metallic superconducting transistors using electrostatic fields, showing a bipolar decay of critical current up to near the critical temperature.
Contribution
It provides the first evidence of field-effect manipulation of supercurrent in metallic superconductors, supported by a phenomenological theory explaining the electric-field-induced perturbation.
Findings
Critical current decays with increasing electrostatic field in titanium and aluminum superconducting films.
Bipolar field effect persists up to 85% of the critical temperature.
Supercurrent can be quenched by electrostatic gating in all-metallic superconducting transistors.
Abstract
In their original formulation of superconductivity, the London brothers predicted the exponential suppression of an field inside a superconductor over the so-called London penetration depth, . Despite a few experiments indicating hints of perturbation induced by electrostatic fields, no clue has been provided so far on the possibility to manipulate metallic superconductors via field-effect. Here we report field-effect control of the supercurrent in -metallic transistors made of different Bardeen-Cooper-Schrieffer (BCS) superconducting thin films. At low temperature, our field-effect transistors (FETs) show a monotonic decay of the critical current under increasing electrostatic field up to total quenching for gate voltage values as large as V in titanium-based devices. This field effect persists up to of the critical…
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