Tunneling statistics for analysis of spin-readout fidelity

TL;DR

This paper analyzes tunneling statistics in a phosphorus atom quantum dot coupled to an rf-SET to understand and optimize spin-readout fidelity, highlighting the influence of magnetic fields on tunneling behavior.

Contribution

It introduces a method using full counting statistics to determine the minimal magnetic field for effective spin-readout and optimize its fidelity.

Findings

Magnetic field influences tunneling bunching and anti-bunching.

Method to identify lowest magnetic field for spin-readout.

Approach to optimize single electron spin-readout fidelity.

Abstract

We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We show how the magnetic field plays a role in determining the bunching or anti-bunching tunnelling statistics of the donor dot and SET system. Using the counting statistics we show how to determine the lowest magnetic field where spin-readout is possible. We then show how such a measurement can be used to investigate and optimise single electron spin-readout fidelity.