AC-Driven Perovskite Light-Emitting Transistors

TL;DR

This paper introduces a high-frequency AC operation mode for perovskite light-emitting transistors, significantly improving brightness, uniformity, and temperature stability by reducing ionic effects.

Contribution

It presents a novel AC-driven operation mode that mitigates ionic screening effects in perovskite transistors, enhancing performance and stability.

Findings

Brighter, more uniform electroluminescence with AC operation

Electroluminescence emission achieved up to room temperature

Reduction of ionic drift and screening effects

Abstract

Perovskite light-emitting field-effect transistors (PeLEFETs) provide a versatile device architecture to control transport and electroluminescence properties of hybrid perovskites, enabling injection of high charge carrier density and spatial control of the radiative recombination zone. Ionic screening and organic cation polarization effects typical of metal-halide perovskites, however, critically affect PeLEFET efficiency and reliability. In this work, we demonstrate a new device operation mode based on high-frequency modulation of the applied voltages, which allows significant reduction of ionic drift/screening in methylammonium lead iodide light-emitting transistors. In optimized top contact PeLEFETs, AC operation results in brighter and more uniform electroluminescence compared to DC-driven devices. Moreover, high frequency modulation enables electroluminescence emission up to room temperature.