Electric field Control of Exchange Bias by Resistive Switching

TL;DR

This paper demonstrates electric field control of exchange bias in a resistive switching device, enabling potential applications in multifunctional nonvolatile magnetic-electrical memory by manipulating conductive filaments in NiO.

Contribution

It introduces a novel method to control exchange bias via electric fields in a resistive switching device, linking filament formation to magnetic property modulation.

Findings

Exchange bias is controllable by electric field in the device.

Resistive switching correlates with filament formation and rupture.

Potential for nonvolatile magnetic-electrical memory applications.

Abstract

We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in high-resistance-state while negligible EB in low-resistance-state. Conductive filaments forming and rupture in the NiO layer but near the Co-NiO interface are considered to play dominant roles in determining the combined resistive switching and EB phenomena. This work paves a new way for designing multifunctional and nonvolatile magnetic-electrical random access memory devices.