Magnetometry with low resistance proximity Josephson junction

TL;DR

This paper reports on the development of a low-dissipation Nb-SQUIPT device with high flux-to-current transfer efficiency, promising for sensitive magnetic measurements with minimal power consumption.

Contribution

The paper introduces a Nb-based SQUIPT with significantly reduced power dissipation and improved flux sensitivity compared to conventional Al-based devices.

Findings

Maximum flux-to-current transfer function of about 55 nA/Φ₀

Power dissipation suppressed to a few femtowatts

Two orders of magnitude improvement over Al-Cu-Al SQUIPT

Abstract

We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) built upon a Nb-Cu-Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and deposition steps, relying on Ar ion cleaning of the Nb contact surfaces. The quality of the Nb-Cu interface is characterized by measuring the temperature-dependent equilibrium critical supercurrent of the SNS junction. In the Nb-SQUIPT device, we observe a maximum flux-to-current transfer function value of about 55 nA/\Phi_0 in the sub-gap regime of bias voltages. This results in suppression of power dissipation down to a few fW. The device can implement a low-dissipation SQUIPT, improving by up to two orders of magnitude compared to a conventional device based on an Al-Cu-Al SNS junction and an Al tunnel probe (Al-SQUIPT).