Chemical vapor deposition growth of bilayer graphene in between molybdenum disulfide sheets

TL;DR

This study demonstrates a high-yield method for directly growing bilayer graphene between molybdenum disulfide sheets using chemical vapor deposition at high temperature, enabling potential applications in nanoelectronics.

Contribution

It introduces a novel CVD process for in-situ growth of bilayer graphene within MoS2, highlighting a simple and efficient fabrication route.

Findings

Bilayer graphene islands are grown at high yield.

Graphene layers are stacked with a total thickness of 0.74 nm.

Growth occurs mainly at MoS2 step edges and defects.

Abstract

Direct growth of flat micrometer-sized bilayer graphene islands in between molybdenum disulfide sheets is achieved by chemical vapor deposition of ethylene at about 800 {\deg}C. The temperature assisted decomposition of ethylene takes place mainly at molybdenum disulfide step edges. The carbon atoms intercalate at this high temperature, and during the deposition process, through defects of the molybdenum disulfide surface such as steps and wrinkles. Post growth atomic force microscopy images reveal that circular flat graphene islands have grown at a high yield. They consist of two graphene layers stacked on top of each other with a total thickness of 0.74 nm. Our results demonstrate direct, simple and high yield growth of graphene/molybdenum disulfide heterostructures, which can be of high importance in future nanoelectronic and optoelectronic applications.