Defect Role in the Carrier Tunable Topological Insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Thin Films

TL;DR

This study investigates how growth conditions and defects influence the electronic properties of (Bi,Sb)$_2$Te$_3$ topological insulator thin films, identifying optimal Sb concentration and effects of annealing on carrier density.

Contribution

It provides a microscopic understanding of disorder and composition effects on carrier density, and identifies the optimal Sb concentration near 0.7 for Fermi level tuning.

Findings

Optimal Sb concentration for Dirac point proximity is x≈0.7.

High-temperature annealing improves crystallinity but increases Te defect density.

Disorder and defects significantly impact carrier density and electronic properties.

Abstract

Alloys of Bi$_2$Te$_3$ and Sb$_2$Te$_3$ ((Bi$_{1-x}$Sb$_x$)$_2$Te$_3$) have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Thin films of these alloys have been particularly important for tuning the energy of the Fermi level, a key step in observing spin-polarized surface currents and the quantum anomalous Hall effect. Previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb:Bi composition ratio, but the optimum ratio varies widely across various studies with no consensus. In this work, we use scanning tunneling microscopy and Landau level spectroscopy, in combination with X-ray photoemission spectroscopy to isolate the effects of growth factors such as temperature and composition, and to provide a microscopic picture of the role that disorder and composition play in determining the carrier density of epitaxially grown (Bi,Sb)$_2$Te$_3$ thin films. Using Landau level spectroscopy, we determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is $x\sim 0.7$. However, we find that the post- growth annealing temperature can have a drastic impact on microscopic structure as well as carrier density. In particular, we find that when films are post-growth annealed at high temperature, better crystallinity and surface roughness are achieved; but this also produces a larger Te defect density, adding n-type carriers. This work provides key information necessary for optimizing thin film quality in this fundamentally and technologically important class of materials.