A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices

TL;DR

This paper introduces a capacitance spectroscopy-based platform that enables precise control and characterization of gate-defined electronic lattices in two-dimensional semiconductors, facilitating exploration of complex quantum phases.

Contribution

It presents a novel measurement and fabrication scheme combining capacitance spectroscopy with independent control of density and potential in 2D electron gases.

Findings

Characterized disorder and inhomogeneity levels.

Optimized gating strategies for strong interaction regimes.

Potential to emulate Mott transitions and Hofstadter physics.

Abstract

Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Here we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control of density and periodic potential strength imposed on a two-dimensional electron gas. We characterize disorder levels and (in)homogeneity and develop and optimize different gating strategies at length scales where interactions are expected to be strong. A continuation of these ideas might see to fruition the emulation of interaction-driven Mott transitions or Hofstadter butterfly physics.