Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes

TL;DR

This review discusses how light during physical vapor epitaxy can modify semiconductor growth, improving properties like crystalline quality, doping, and defect control, with implications for future research and applications.

Contribution

It provides a comprehensive overview of light-induced mechanisms affecting semiconductor growth, highlighting experimental insights and potential technological benefits.

Findings

Enhanced anion desorption observed

Increased doping efficiency documented

Improved crystalline quality at low temperatures

Abstract

Herein we review the remarkable range of modifications to materials properties associated with photoexcitation of the growth surface during physical vapor epitaxy of semiconductors. We concentrate on mechanisms producing measureable, utilizable changes in crystalline perfection, phase, composition, doping, and defect distribution. We outline the relevant physics of different mechanisms, concentrating on those yielding effects orthogonal to the primary growth variables of temperature and atomic or molecular fluxes and document the phenomenological effects reported. Based on experimental observations from a range of semiconductor systems and growth conditions, the primary effects include enhanced anion desorption, molecular dissociation, increased doping efficiency, modification to defect populations and improvements to the crystalline quality of epilayers grown at low temperatures. Future research directions and technological applications are also discussed.