A QM/MM equation-of-motion coupled-cluster approach for predicting semiconductor color-center structure and emission frequencies
Jesse J. Lutz, Xiaofeng F. Duan, Larry W. Burggraf

TL;DR
This paper presents a combined QM/MM and EOMCC approach to accurately predict the structure and emission spectra of silicon-vacancy defects in silicon carbide, validated against experimental photoluminescence data.
Contribution
It introduces a novel computational framework integrating SIMOMM with EOMCC methods for precise defect characterization in semiconductors.
Findings
EOMCC methods reliably predict defect charge states and spectra within 0.1 eV.
The approach accurately reproduces experimental photoluminescence peaks.
Extension to transition-metal defects demonstrates broad applicability.
Abstract
Valence excitation spectra are computed for all deep-center silicon-vacancy defect types in 3C, 4H, and 6H silicon carbide (SiC) and comparisons are made with literature photoluminescence measurements. Nuclear geometries surrounding the defect centers are optimized within a Gaussian basis-set framework using many-body perturbation theory or density functional theory (DFT) methods, with computational expenses minimized by a QM/MM technique called SIMOMM. Vertical excitation energies are subsequently obtained by applying excitation-energy, electron-attached, and ionized equation-of-motion coupled-cluster (EOMCC) methods, where appropriate, as well as time-dependent (TD) DFT, to small models including only a few atoms adjacent to the defect center. We consider the relative quality of various EOMCC and TD-DFT methods for (i) energy-ordering potential ground states differing incrementally in…
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