A quantum model for voltage noise: Theory and Experiments

TL;DR

This paper develops a quantum model for voltage noise based on a discrete electron shuttling mechanism, emphasizing the role of admittance over impedance to better understand thermal interactions.

Contribution

It introduces a novel quantum voltage noise model using admittance Y(jf), highlighting the importance of electron shuttling and thermal bath interactions.

Findings

Discreet electron shuttling generates measurable voltage noise.

Admittance Y(jf) better captures thermal interactions than impedance.

The model aligns with quantum fluctuation principles.

Abstract

Although the Fluctuation-Dissipation framework is a first step to get a quantum model for electrical noise, the merging of displacement and conduction currents into the sole current of a series notion like the resistance R(f) does not help in it this task. Used to handle these currents as orthogonal components in electromagnetic waves, the usage of the impedance Z(jf)=R(f)+jX(f) for the noisy device hides the way it interacts with its thermal bath. In contrast to this, the admittance Y(jf) is a parallel notion directly linked with the aforementioned interaction that has led us to develop a discrete model for current fluctuations where single electrons randomly shuttling between any pair of terminals generate the voltage noise we can measure between them.