Microwave impedance of a dc-biased Josephson Fluxonic Diode in the presence of magnetic field and rf drive

TL;DR

This paper investigates how microwave impedance of a dc-biased Josephson Fluxonic Diode is affected by magnetic fields and rf drive, revealing significant resistance variations and phase slip phenomena under various conditions.

Contribution

It provides a detailed calculation of microwave impedance dependence on magnetic field and rf excitation, highlighting new oscillation-like features and resistance behaviors in JFD.

Findings

Magnetic field increases vortex-antivortex pair generation, tuning microwave resistance.

Microwave resistance can increase up to 30 times the zero-field resistance.

Sharp phase slips occur in reverse bias mode with increasing frequency or amplitude.

Abstract

The dependence of microwave impedance of a dc-biased Josephson Fluxonic Diode (JFD) under application of both dc magnetic field and rf excitation is calculated with a variety of conditions. For finite length of a JFD excited by a very low microwave excitation below its plasma frequency, applied dc magnetic field increases the rate of Vortex and Anti-Vortex (VAV) pair generation which fine-tunes the microwave resistance up to several factors more than its zero field microwave resistance (R0). Under this circumstance, adding a dc bias for moving VAVs causes oscillation-like features in microwave impedance of JFD either in forward or reverse bias. As a result, the microwave resistance increases up to 30R0 in the forward bias despite the fact that damping parameter (\b{eta}) can limit this increase. On the other hand, sharp phase slips are seen in reverse bias mode on the reactance of overdamped JFD while increasing the frequency or amplitude of microwave excitation leads to unprecedented effects of resistance which is described.