Band structure of Cd$_3$As$_2$ from Shubnikov - de Haas and de Haas - van Alphen effects

TL;DR

This paper compares experimental and theoretical data on the electronic properties of Cd$_3$As$_2$, revealing its inverted band structure similar to HgTe under tensile stress through analysis of quantum oscillation effects.

Contribution

It provides a theoretical model for the band structure of Cd$_3$As$_2$ and determines its parameters using experimental data and least squares fitting.

Findings

Cd$_3$As$_2$ has an inverted band structure.

Theoretical predictions match experimental quantum oscillation data.

Band parameters were quantitatively determined.

Abstract

Experimental values of SdH and dHvA periods and cyclotron effective masses found by Rosenman and Doi et al. have been compared with the theoretical predictions derived in this work for a tetragonal narrow gap semiconductor. By the least square fit method the values of band parameters were obtained. It has been established that Cd$_3$As$_2$ has inverted band structure resembling HgTe under tensile stress.