Hopping charge transport in amorphous semiconductors with the spatially correlated exponential density of states

TL;DR

This paper analyzes charge transport in amorphous semiconductors with spatially correlated exponential density of states, providing exact calculations for average carrier velocity in the quasi-equilibrium regime and proposing a heuristic model for the non-equilibrium regime.

Contribution

It introduces an exact calculation method for carrier velocity in the quasi-equilibrium regime and a heuristic approach for the dispersive regime in correlated exponential density of states.

Findings

Exact average carrier velocity in quasi-equilibrium regime

Heuristic model for non-equilibrium dispersive regime

Insights into hopping charge transport mechanisms

Abstract

Hopping charge transport in amorphous semiconductors having spatially correlated exponential density of states has been considered. Average carrier velocity is exactly calculated for the quasi-equilibrium (nondispersive) transport regime. We suggest also a heuristic approach for the consideration of the carrier velocity for the non-equilibrium dispersive regime.