Tailoring Semiconductor Lateral Multi-junctions for Giant Photoconductivity Enhancement

TL;DR

This paper demonstrates the synthesis of a novel monolayer lateral heterostructure of WS2/WS2(1-x)Se2x/WS2 that significantly enhances local photoconductivity, highlighting its potential for optoelectronic applications.

Contribution

It reports the first successful direct growth of a lateral multi-junction heterostructure with tailored photoconductivity enhancement in TMDs.

Findings

Photoconductivity in alloy regions is enhanced by 2 orders of magnitude.

Lateral heterostructures are characterized by Raman, PL, and STEM.

Finite element analysis confirms carrier confinement causes the enhancement.

Abstract

Semiconductor heterostructures have played a critical role as the enabler for new science and technology. The emergence of transition metal dichalcogenides (TMDs) as atomically thin semiconductors has opened new frontiers in semiconductor heterostructures either by stacking different TMDs to form vertical heterojunctions or by stitching them laterally to form lateral heterojunctions via direct growth. In conventional semiconductor heterostructures, the design of multi-junctions is critical to achieve carrier confinement. Analogously, we report successful synthesis of monolayer WS2/WS2(1-x)Se2x/WS2 multi-junction lateral heterostructure via direct growth by chemical vapor deposition. The grown structures are characterized by Raman, photoluminescence, and annular dark-field scanning transmission electron microscopy to determine its lateral compositional profile. More importantly, using microwave impedance microscopy, we demonstrate that the local photoconductivity in the alloy region can be tailored and enhanced by 2 orders of magnitude over pure WS2. Finite element analysis confirms that this effect is due to the carrier diffusion and confinement into the alloy region. Our work exemplifies the technological potential of atomically thin lateral heterostructures in optoelectronic applications.