Finite element approximation of the fields of bulk and interfacial line defects

TL;DR

This paper develops a finite element numerical method to accurately model the stress and distortion fields of complex bulk and interfacial line defects using generalized disclination theory, advancing defect microstructure analysis.

Contribution

It introduces a systematic finite element approach for simulating the fields of various line defects within the generalized disclination framework, including complex defect interactions.

Findings

Finite element approximations of defect fields are systematically achievable.

Energetically favorable microstructures can be identified.

The method applies to diverse defect configurations, including grain boundaries and disclination loops.

Abstract

A generalized disclination (g.disclination) theory [AF15] has been recently introduced that goes beyond treating standard translational and rotational Volterra defects in a continuously distributed defects approach; it is capable of treating the kinematics and dynamics of terminating lines of elastic strain and rotation discontinuities. In this work, a numerical method is developed to solve for the stress and distortion fields of g.disclination systems. Problems of small and finite deformation theory are considered. The fields of a single disclination, a single dislocation treated as a disclination dipole, a tilt grain boundary, a misfitting grain boundary with disconnections, a through twin boundary, a terminating twin boundary, a through grain boundary, a star disclination/penta-twin, a disclination loop (with twist and wedge segments), and a plate, a lenticular, and a needle inclusion are approximated. It is demonstrated that while the far-field topological identity of a dislocation of appropriate strength and a disclination-dipole plus a slip dislocation comprising a disconnection are the same, the latter microstructure is energetically favorable. This underscores the complementary importance of all of topology, geometry, and energetics in understanding defect mechanics. It is established that finite element approximations of fields of interfacial and bulk line defects can be achieved in a systematic and routine manner, thus contributing to the study of intricate defect microstructures in the scientific understanding and predictive design of materials. Our work also represents one systematic way of studying the interaction of (g.)disclinations and dislocations as topological defects, a subject of considerable subtlety and conceptual importance [Mer79, AMK17].