Towards Universal Non-Volatile Resistance Switching in Non-metallic Monolayer Atomic Sheets

TL;DR

This paper demonstrates stable non-volatile resistance switching in various non-metallic monolayer 2D materials, revealing a universal phenomenon with potential applications in flexible memory and RF switching.

Contribution

It reports the first observation of universal NVRS in non-metallic 2D monolayers, expanding understanding of switching mechanisms at atomic interfaces.

Findings

NVRS observed in multiple 2D materials including TMDs and h-BN

Switching is forming-free and occurs at atomic interfaces

A 50 GHz RF monolayer switch is demonstrated

Abstract

Here, we report the intriguing observation of stable non-volatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX2, M=Mo, W; and X=S, Se) transitional metal dichalcogenides (TMDs), and insulating hexagonal boron nitride (h-BN), which alludes to the universality of this phenomenon in non-metallic 2D monolayers, and features forming-free switching. This observation of NVRS phenomenon, widely attributed to ionic diffusion, filament and interfacial redox in bulk oxides and electrolytes, inspires new studies on defects, ion transport and energetics at the sharp interfaces between atomically-thin sheets and conducting electrodes. From a contemporary perspective, switching is all the more unexpected in monolayers since leakage current is a fundamental limit in ultra-thin oxides. Emerging device concepts in non-volatile flexible memory fabrics, and brain-inspired (neuromorphic) computing could benefit substantially from the pervasive NVRS effect and the associated wide materials and engineering co-design opportunity. Experimentally, a 50 GHz radio-frequency (RF) monolayer switch is demonstrated, which opens up a new application for electronic zero-static power RF switching technology.